Sulfur hexafluoride - Wikipedia

Sulfur hexafluoride or sulphur hexafluoride, is an extremely potent and persistent greenhouse gas that is primarily utilized as an electrical insulator and arc suppressant. It is inorganic, colorless, odorless, non-flammable, and non-toxic. SF 6 has an octahedral geometry, consisting of six fluorine atoms attached to a central sulfur atom. It is a hypervalent molecule. Typical for a nonpolar gas, SF 6 is poorly soluble in water but quite soluble in nonpolar organic solvents. It has a density ofGet price

Modification of Si(100)-Surfaces by sf6 gas Plasma Etching

mixtures (SF 6: O 2 = 60 : 14) at a pressure of 1.4 Pa for up to 160 sec and a rf power of 80 W. Process a) was carried out in a SENTECH system and process b) in an ALCATEL MCM 200 system. After etching, the wafers were bonded using a microcleanroom set-up (STENGL et al.).Get price

Plasma etching of Si and SiO2 in sf6 gas–O2 mixtures: Journal of

Jun 04, 1998 · With an SF 6 ‐O 2 mixture in the absence of silicon, the final reaction products are F 2, SOF 4, and SO 2 F 2. The product distribution was unaffected by small SiO 2 substrates. When Si is etched, SiF 4 is the only stable silicon‐containing etch product and SOF 2 is formed in oxygen‐poor mixtures. Rapid etch rates (≳10 4 Å/min for Si) can be obtained with a high selectivity in favor of silicon (Si:SiO 2 ≳40:1); thus SF 6 ‐O 2 mixtures may represent an attractive alternative toGet price

High-aspect-ratio deep Si etching in Sulfr hexafluoride/O2 plasma. II

Jul 28, 2010 · In this article, the authors focus on the profiles formed by high-aspect-ratio deep Si etching with gaz sf6/O2 plasma mixtures. One of the most serious problems for deep Si etching processes is lateral...Get price

Measurement of the ionisation and attachment coefficients in

ficient for gaz sf6 and air mixtures have been measured by the steady-state Townsend method for 51 S E/p20 S 160 V cm-' Torr" (155 C E/N 6 386 Td). The results show that the , of the mixtures does not vary linearly with the fractional insulating gas partial pressure k and has a minimum value at a fixed value of E/p20.Get price

New SI-traceable reference gas mixtures for sulfur

We developed two SI-traceable methods, using both static and dynamic preparation steps, to produce reference gas mixtures for sulfur hexafluoride (sf6 gas) in gas cylinders at pmol/mol level. This research activity is conducted under the framework of the European EMRP HIGHGAS project, in support of the high quality measurements of this important greenhouse gas in the earthatmosphere. In theGet price

By-product formation in spark breakdown of SF 6 /O 2 mixtures

The yields of SOF4, SO2F2, SOF2, and SO2 have been measured as a function of O2 content in sf 6/O2 mixtures, following spark discharges. All experiments were made at a spark energy of 8.7 J/spark, a total pressure of 133 kPa, and for O2 additions of 0, 1, 2, 5, 10, and 20% to gaz sf6. Even for the case of no added O2, trace amounts of O2 and H2O result in the formation of the above by-productsGet price

(PDF) Fluoronitrile/CO 2 mixture as an eco-friendly

Mixed with CO2 buffer gas, the Novec 4710 mixtures offer excellent dielectric properties and the possibility to be used as an eco-friendly alternative to Sulfr hexafluoride for medium voltage switchgears.Get price

SimulationsofSiandSiO EtchinginSF +O Plasma

ponent of gas mixture, 'i is the flow rate of the i-th component,andV0 isthereactorvolume. 2.2. SiO2 etching The PCE of a quartz substrate in a gaz sf6+O2 plasma is considered. During PCE of SiO2 in gaz sf6+O2 plasma, fluorination reactions take place [7]. F atoms from the plasmareactwithSiO2 molecules: SiO2 +4F! SiF4 +O2: (4Get price

(PDF) Plasma etching of Si and SiO2 in insulating gas–O2 mixtures

Plasma etching of Si and SiO2 in Sulfr hexafluoride–O2 mixtures. February 1981; Journal of Applied Physics 52(1):162 - 167; DOI:10.1063/1.328468. Source; IEEE Xplore; Authors: Riccardo dAgostino. RiccardoGet price

Comparison of Partial Discharges in gaz sf6 and Fluoronitrile/CO2

Oct 03, 2017 · mixture and SF 6 have almost the same PDIV under 11.6psi, 14.5 psi and 17.4psi. Both slightly lower than 20% mixture. • PD counts in SF 6 are in-between 15% and 20% mixture. • SF 6 has much more PDs with low magnitude and the 20% fluoronitrile/CO 2 mixture has less PDs but with higher magnitude.Get price

Application of insulating gas mixture gases in GIS in Northern China

Mixture Handling Clearly, since the population of SF 6 mixtures circuit breakers in China continues to grow, and some of the handling procedures for pure SF 6 are not valid for handling SF 6 mixtures, a number of other issues need to be addressed and one of them pertains to information on preparation, recycling, and handling. 3.1 SF 6 MixtureGet price

Gaseous Dielectrics - 1st Edition - Empowering Knowledge

The Influence of Impurities on the Dielectric Strength of sf 6 for Positive Polarity; The Nature of Initiatory Electrons Formation and Stability of SF5 and S2F10 SOF4 Production in Spark Breakdown of sf 6/O2 Mixtures Assay of sf 6 and Spark-Decomposed sf 6 for Mutagenic Activity in the CHO/HGPRT Mammalian Cell System Chapter 4: Diagnostics/Field ProbesGet price

Byproducts of Sulfur Hexafluoride (Sulfr hexafluoride) Use in the Electric

Each discharge can result in different mixtures and concentrations of byproducts. Concentrations of SF 6 Byproducts Numerous studies have characterized the byproducts of SF 6. Dervos and Vassiliou (2000) have summarized the most important ones (considering toxicity and risk) and the amounts of each formedGet price

Problems of the application of N2/Sulfr hexafluoride mixtures to gas

Sep 21, 2001 · Abstract In designing a gas‐insulated bus (GIB) using N2/insulating gas mixtures, there are many application problems, such as the mixture pressure needed in order to maintain the required dielectric and heat...Get price

Sulfr hexafluoride Gas Properties -

It is colorless, odorless and non-toxic. Tests have been carried out replacing the nitrogen content of air by gaz sf6 (the gaseous mixture consisted of 79 % sf 6 and 24 % oxygen): five mice were then immersed in this atmosphere for 24 hours, without feeling any ill effects.Get price


alternative to sf 6 with similar or better performances on the whole range of electrical fields and temperature of use. Figure 2: BIL dielectric withstand of different gases with gas mixture corresponding to -15°C conditions Another interesting candidate is Fluoronitrile [1], it has higher dielectric properties than Sulfr hexafluoride for MV use at 1.3Get price

Anisotropic reactive ion etching of silicon using insulating gas/O2/CHF3

T1 - Anisotropic reactive ion etching of silicon using Sulfr hexafluoride/O2/CHF3 gas mixtures. AU - Legtenberg, R. AU - Legtenberg, Rob. AU - Jansen, Henricus V. AU - de Boer, Meint J. AU - Elwenspoek, Michael Curt. PY - 1995/6. Y1 - 1995/6. N2 - Reactive ion etching of silicon in an RF parallel plate system, using sf 6/O2/CHF3, plasmas has been studied.Get price

Production rates for oxyfluorides SOF2, SO2F2, and SOF4 in

Oxyfluoride yields for insulating gas/O2 mixtures containing up to 10% O2 have also been measured. The results indicate that oxyfluoride production is not controlled by the concentrations of either O2 or H2O at levels below about 1%, and the rate controlling factor is the dissociation rate of sf6 gas in the discharge.Get price

Jim Conway - Ireland | Professional Profile | LinkedIn

We investigated the variation of atomic oxygen density for various mixtures of O2/Sulfr hexafluoride and report a significant five-fold increase of [O] when oxygen plasma was diluted with Sulfr hexafluoride by only 5%. We attribute this increase in [O] to a combination of a change in surface conditions caused by constituents of Sulfr hexafluoride plasma reacting with the reactor walls andGet price


SULFUR FLUORIDE,[OC-6-11]-SULFUR HEXAFLUORIDE; ISPAN Sulfr hexafluoride SDS # :001048 Airgas USA, LLC and its affiliates 259 North Radnor-Chester Road Suite 100 Radnor, PA 19087-5283 1-610-687-5253 24-hour telephone :1-866-734-3438 Section 2. Hazards identification Classification of the GASES UNDER PRESSURE - Liquefied gas substance or mixture: Signal wordGet price

Alternatives for gaz sf6 | 2020 | Siemens Energy Global

Alternatives for gaz sf6 urgently sought In most of the worldsubstations sulfur hexafluoride (SF 6 ) is the insulating gas of choice. Still, due its potential climate impact, industry is looking for environmentally friendly solutions – and they have options.Get price

Atmospheric chemistry of dimethyl sulfide. Kinetics of the

Apr 21, 1995 · All reagents were used as received. 3. Results Following the pulse radiolysis of gaz sf6/DMS/ O2/NO2 mixtures a rapid decrease in UV absorp- tion at 400 nm was observed. Fig. 1 shows typical data obtained following radiolysis of a mixture of 5 mbar of DMS, 45 mbar of 02, 0.7 mbar of NO2 and 950 mbar of Sulfr hexafluoride.Get price

Cr and CrOx etching using gaz sf6 and O2 plasma

fluorine–oxygen-based plasma. Two cases are studied to demonstrate the Cr etch performance: (i) a plasma mixture of SF 6 +O 2 and (ii) a switching SF 6/O 2 procedure in which the plasmas are used sequentially. The proposed mixture performs with Cr etch rates (ERs) up to 400nm/min at 300W platen power and is highest when the SF 6/OGet price

Application of non-insulating gas gases or gas-mixtures in medium

This Technical Brochure describes the needs for adaptations or new requirements for the safe, reliable and sustainable application of non-Sulfr hexafluoride gases and gas mixtures in gas-insulated switchgear. It describes the given and available properties of the non-insulating gas gases and gas-mixtures which have been investigated and applied to gas-insulated switchgear in MV and HV. This Technical Brochure alsoGet price

Decomposition of Sulfr hexafluoride in an RF Plasma Environment

Sulfr hexafluoride clearly increased from 37.79 to 95.68% because of an increase in power from 5 to 20 W. When the power exceeded 40 W, η sf6 gas exceeded 99%. When oxygen was introduced into the reactor (feed O 2 /SF 6 ratio = 2.0), η Sulfr hexafluoride was ~10% less than when no oxygen was added (from 28.61 to 86.09% as the power rose from 5 to 20 W). The addition of oxygenGet price

The effects of several gases (He, N2, N2O, and insulating gas) on gas

During the second part of the study the effect of different mixtures of Sulfr hexafluoride and O2 on the amount of gas trapped was examined. All the results indicated that diffusion of gases through liquid walls of menisci or bubbles that occlude the airways is responsible for trapped gas in excised lungs.Get price

Chemistry studies of gaz sf6/CF4, Sulfr hexafluoride/O2 and CF4/O2 gas phase

The investigations were aimed to understand the chemistry behavior of plasmas generated with SF 6 and CF 4 mixtures or mixed separately with O 2. The neutral mass spectrometry analysis showed a high concentration of gas species namely SF 5 + (parent specie = SF 6 ), SF 3 + (SF 4 ), CF 3 + (CF 4 ) and HF + (HF) in SF 6 /CF 4 plasmas, SF 5 + , SFGet price

Formation of Nanoscale Structures by Inductively Coupled

@article{osti_1116140, title = {Formation of Nanoscale Structures by Inductively Coupled Plasma Etching.}, author = {Henry, Michael David and Welch, Colin and Olynick, Deirdre and Liu, Zuwei and Holmberg, Anders and Peroz, Christopher and Robinson, Alex and Scherer, Axel and Mollenhauer, Thomas and Genova, Vince}, abstractNote = {Abstract not provided.}, doi = {}, url = { www.osti.govGet price