insulating gas Gas Systems II -

sf6 gas Gas Systems II - micafluid.ptGet price

Plasma etching of Si and SiO2 in insulating gas–O2 mixtures: Journal of

Jun 04, 1998 · With an SF 6 ‐O 2 mixture in the absence of silicon, the final reaction products are F 2, SOF 4, and SO 2 F 2. The product distribution was unaffected by small SiO 2 substrates. When Si is etched, SiF 4 is the only stable silicon‐containing etch product and SOF 2 is formed in oxygen‐poor mixtures. Rapid etch rates (≳10 4 Å/min for Si) can be obtained with a high selectivity in favor of silicon (Si:SiO 2 ≳40:1); thus SF 6 ‐O 2 mixtures may represent an attractive alternative toGet price

Decomposition of sf 6 in an RF Plasma Environment

sf 6 clearly increased from 37.79 to 95.68% because of an increase in power from 5 to 20 W. When the power exceeded 40 W, η Sulfr hexafluoride exceeded 99%. When oxygen was introduced into the reactor (feed O 2 /SF 6 ratio = 2.0), η sf 6 was ~10% less than when no oxygen was added (from 28.61 to 86.09% as the power rose from 5 to 20 W). The addition of oxygen to the reactor re-Get price

The Sulfr hexafluoride-ReUse-Process A contribution on the sustainability of SF

the used sf6 gas is regenerated into new virgin gas. sf6 gas which has been regenerated by Solvay fulfills even a higher specification than that required by IEC 60376, as illustrated in Table 1. In order to be able to transform the used SF. 6 . gas back into new virgin SF. 6 . the used gas must fulfill the so-called SF. 6 – ReUse – Specification inGet price

Comparison of Partial Discharges in sf 6 and Fluoronitrile/CO2

Oct 03, 2017 · • gaz sf6 has been used successfully for decades in the power industry. • One big shortcoming – has a high global warming potential (23,500) • Included in Kyoto Protocol (1997) on the list to be limited. Global annual insulating gas emissions from electrical equipment are reported by ECOFYS: 1,600 t to 2,800 t SF 6. That equals to 37,600 kt to 65,800Get price


alternative to Sulfr hexafluoride with similar or better performances on the whole range of electrical fields and temperature of use. Figure 2: BIL dielectric withstand of different gases with gas mixture corresponding to -15°C conditions Another interesting candidate is Fluoronitrile [1], it has higher dielectric properties than Sulfr hexafluoride for MV use at 1.3Get price


EMISSION FACTORS: DATABASE DOCUMENTATION (2020 edition) - 3 INTERNATIONAL ENERGY AGENCY Please note that all IEA data are subject to the following Terms and Conditions found on the IEA’s website at:Get price

Measurement of the ionisation and attachment coefficients in

fractional sf6 gas partial pressure k at fixed E/pzo. 3.1. The Townsend first ionisation a/p~ and attachment q/pza coeficients The values of dp20 for sf6 gas and air mixtures are shown in figure 1. A comparison with the values in the literature shows that the present values of dpzO for Sulfr hexafluoride are in goodGet price

(PDF) High rate etching of SiC using inductively coupled

Inductively coupled plasma (ICP) reactive ion etching of SiC was investigated using sf 6 plasmas. Etch rates were studied as a function of substrate bias voltage (−3 to −500 V), ICP coil powerGet price


The determination of peroxide value is highly empirical. Variations in the procedure may affect the results. In case of divergent results between two laboratories, the two parts must carry out a second series of analyses strictly applying common critical parameters: - Test portion The value obtained depends on the sample mass.Get price

Byproducts of Sulfur Hexafluoride (Sulfr hexafluoride) Use in the Electric

Byproducts of Sulfur Hexafluoride (SF 6) Use in the Electric Power Industry Prepared for U.S. Environmental Protection Agency Office of Air and RadiationGet price

Thailand Hazardous Substances List - ChemSafetyPro.COM

Thailand Hazardous Substances List. Little Pro on 2016-01-05 Views: The Hazardous Substances List in Thailand includes over 1,500 entries of chemicals that are controlled by various authorities under Thailand Hazardous Substances Act. This list is further divided into 6 annexes based on responsible authorities.Get price

Jim Conway - Ireland | Professional Profile | LinkedIn

We investigated the variation of atomic oxygen density for various mixtures of O2/Sulfr hexafluoride and report a significant five-fold increase of [O] when oxygen plasma was diluted with sf6 gas by only 5%. We attribute this increase in [O] to a combination of a change in surface conditions caused by constituents of sf 6 plasma reacting with the reactor walls and also due to an increase in the electron temperature.Get price

Reactive Ion Etching Selectivity of Si/SiO2: Comparing of two

uoromethane and oxygen (CHF3/O2). Scholarly Commons, University of Pennsylvania, 2016. 4Meredith Metzler. Reactive ion etch (RIE) of silicon nitride (SiNx) with tetra uoromethane (CF4). Scholarly Commons, University of Pennsylvania, 2016. 5Meredith Metzler. Reactive ion etch (RIE) of silicon nitride (SiNx) with tri uoromethane and oxygen (CHF3/O2).Get price

Sulfr hexafluoride reduction, Alternatives and Process improvement in the

2 Comparison of Sulfr hexafluoride gas exhaust by Die caster 1. Japan; [33 companies in 2004, Data by JMA] Year 2001 2002 2003 2004 2005 sf 6 kg/ ton-Mg melting 3.3 2.7 2.3 1.9 2.0Get price

PAPER OPEN ACCESS Anisotropic plasma etching of Silicon in

Content from this work may be used under the terms of the CreativeCommonsAttribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.Get price

SO2 determination

determination of sulfites in food and beverages (see, e.g., AOAC Official Method 990.28). The OMW method is also the official method for the determination of sulfites in food according to the China National Standard (CNS, 2003). Using the OMW method, samples are distilled under acidic conditions and then analyzed by iodine orGet price

History of atmospheric SF from 1973 to 2008

2007; Peters et al., 2004), determination of the age of strato-spheric air (e.g. Hall and Waugh, 1997), investigation of the relative importance of atmospheric transport processes (Patra et al., 2009) and groundwater dating (e.g. Bunsenberg and Plummer, 2000). Each of these applications rely on an ac-curate knowledge of the atmospheric historyGet price

Silicon doping effect on sf 6/O2 plasma chemical texturing

ABSTRACT. A SF 6 /O 2 plasma chemical etching is proposed as a process to texture n- and p-doped c-Si (100) by chemical reactivity of active fluorine species, under conditions avoiding ion bombardment and sputtering. Under this chemical etching regime, we found a strong impact of silicon doping on texturing characteristics and effectiveness.Get price

I want know how to dry etch the TiO2? - ResearchGate

The gasese we have are: sf6 gas(0-100sccm), O2(0-20sccm), Ar(0-5sccm), and C4F8. my sample is 3um SiO2 deposited on the surface of Si wafer. The recipe I designed for 3um SiO2 etching is:Get price

Process Gas Chromatographs | Yokogawa America

The GC8000 is a process analyzer that uses gas chromatography to measure the composition of multiple components in a stream. Engineered with reliable electronics and intelligently designed columns and valves, the GC8000 improves ease of maintenance while reducing operating costs.Get price

Chemistry studies of sf 6/CF4, sf 6/O2 and CF4/O2 gas phase

In this work, mass spectrometry and optical emission spectroscopy techniques were used to monitor the molecular and atomic neutral species during SF 6 /CF 4, SF 6 /O 2 and CF 4 /O 2 plasmas generated in a radio-frequency Hollow Cathode Reactive Ion Etching (HCRIE) reactor keeping constant the following operational conditions: total gas flow rate, gas pressure, and discharge power.Get price

[PDF] Cryogenic etching of silicon with sf 6/O2/SiF4 plasmas

Cyrogenic etching of silicon is envisaged to enable better control over plasma processing in microelectronics and to limit plasma induced damage for features beyond the 14 nm technology node. We here present results of plasma modelling for a gaz sf6/O2/SiF4 plasma and of molecular dynamics (MD) simulations for predicting surface interactions, together with results of etch experiments for validation.Get price

Solvay Special Chemicals

Solvay Special Chemicals Sulphur Hexafluoride 5 Sulfr hexafluoride – a gas with unusual properties Solvay‘s sulphur hexafluoride is a non- toxic, inert, insulating and cooling gas ofGet price

Analysis of Sulfur Hexafluoride in Air

1.2 08-31-2015 in use BH JWE TB_analysis_insulating gas_v1.2.doc . 3 of 9 . mole fraction: The ratio of the number of moles of analyte to the total number of moles. Dry air mole fraction is the ratio of the number of moles of analyte to the total number of moles in dry air. Within the scope of this TP, all samples are analyzed for dry air mole fraction.Get price

Gaseous Dielectrics - 1st Edition - Elsevier

Purchase Gaseous Dielectrics - 1st Edition. Print Book E-Book. ISBN 9780080346939, 9781483191072Get price

Elimination of SF From Transmission System Equipment

Elimination of SF 6 From Transmission System Equipment A Thesis Resubmitted To The University of Manchester For The Degree of PhD In The Faculty of Engineering andGet price

Analysis of Impurities in SF Using the Agilent 490 Micro GC

A chromatogram for SF 6 bulk gas sample with a concentration of larger than 99 % shows baseline separation for carbon tetrafluoride (0.19 %), carbon dioxide (100 ppm), and sulfurGet price

Samir kechkar - Process Engineer (Hitachi, Dry Etch) - Intel

View Samir kechkar’s profile on LinkedIn, the world’s largest professional community. Samir has 2 jobs listed on their profile. See the complete profile on LinkedIn and discover Samir’s connections and jobs at similar companies.Get price